Journals

[1]   P. Kushwaha et.al., "Impact of BB84 QKD Transmitter's Parameter Mismatch on Secure Key Generation Rate", Photonic Network Communications Journal, https://doi.org/10.1007/s11107-023-01010-3, Feb 2024 (Link).

[2]   M. S. Nazir, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "Characterization and Modeling of Drain Lag using a Modified RC Network in the ASM-HEMT Framework", Solid State Electronics, Vol. 199, art. no. 108490, January 2023.

[3]   M. S. Nazir, P. Kushwaha, A. Pampori, S. A. Ahsan, and Y. S. Chauhan, "Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures", IEEE Transactions on Electron Devices, Vol. 69, Issue 11, November 2022.

[4]   Girish Pahwa, Pragya Kushwaha, Avirup Dasgupta, Sayeef Salahuddin, and Chenming Hu, "Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures", IEEE Transactions on Electron Devices, Accepted July 2021.

[5]   P. Kushwaha, A. Dasgupta, M.-Y. Kao, H. Agarwal, S. Salahuddin, C. Hu, "Design Optimization Techniques in Nanosheet Transistor for RF Applications", IEEE Transactions on Electron Devices, Vol. 67, Issue 10, 2020.

[6]   Dasgupta, S. S. Parihar, H. Agarwal, P. Kushwaha, Y. S. Chauhan and C. Hu, "Compact Model for Geometry Dependent Mobility in Nanosheet FETs", IEEE Electron Device Letters, 2020.

[7]   A. Dasgupta, S. S. Parihar, P. Kushwaha, H. Agarwal, M.-Y. Kao, S. Salahuddin, Y. S. Chauhan and C. Hu, "BSIM Compact Model for Quantum Confinement in Advanced Nanosheet FETs", IEEE Transactions on Electron Devices (Early access), 2020.

[8]   P. Kushwaha, H. Agarwal, Y. Lin, A. Dasgupta, M. Kao, Y. Lu, Y. Yue, X. Chen, J. Wang, W. Sy, F. Yang, P. C. Chidambaram, S. Salahuddin, C. Hu, “Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology node”, in IEEE Electron Device Letters, vol 40, no 6, pp. 985-988, doi 10.1109/LED.2019.2911614, ISSN 0741-3106, June, 2019.

[9]   H. Agarwal, C. Gupta, R. Goel, P. Kushwaha, Y.-Kai Lin, M.-Yen Kao, J. P. Duarte, H.-Lin Chang, Y. S. Chauhan, S. Salahuddin, and C. Hu, “BSIM-HV: High Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect”, accepted in IEEE Transactions on Electron Devices, June 2019.

[10]Y-Kai Lin, H. Agarwal, M-Yen Kao, J. Zhou, Y.-Hung Liao, A. Dasgupta, P. Kushwaha, S. Salahuddin, and C. Hu, “Spacer Engineering in Negative Capacitance FinFETs” in IEEE Electron Device Letters, vol. 40, no. 6, pp. 1009-1012, doi: 10.1109/LED.2019.2911104, June 2019.

[11]M.-Yen Kao, Y.-Kai Lin, H. Agarwal, Y.-Hung Liao, P. Kushwaha, A. Dasgupta, S. Salahuddin, and C. Hu, “Optimization of NCFET by Matching Dielectric and Ferroelectric Non-uniformly along the Channel” in IEEE Electron Device Letters, vol. 40, no. 5, pp. 822-825, May 2019. doi: 10.1109/LED.2019.2906314

[12]Y.-Kai Lin, H. Agarwal, P. Kushwaha, M.-Yen Kao, Y.-Hung Liao, S. Salahuddin, and C. Hu, “Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs” in IEEE Trans. on Electron Devices, vol. 66, no. 4, pp. 2023-2027, doi: 10.1109/TED.2019.2899810, April 2019.

[13]H. Agarwal, P. Kushwaha, Y.-Kai Lin, M.-Yen Kao, Y.-Hung Liao, A. Dasgupta, S. Salahuddin, and C. Hu, “Proposal for Capacitance Matching in Negative Capacitance Field Effect Transistors,” in IEEE Electron Device Letters, vol. 40, no. 3, pp. 463-466, doi: 10.1109/LED.2019.2891540, March 2019.

[14]D. Rajasekharan, P. Kushwaha, S. S. Chauhan, and Y. S. Chauhan, “Non-Boolean Associative Processing using FDSOI MOSFET-based Inverter,” in IEEE Transactions on Nanotechnology, 2018 (Link)

[15]M.-Y. Kao, A. Sachid, Y.-K. Lin, Yu-H. Liao, H. Agarwal, P. Kushwaha, J. P. Duarte, H.-L. Chang, S. Salahuddin and C. Hu, “Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor ” accepted in IEEE Transactions on Electron Devices, 2018.

[16]H. Agarwal, P. Kushwaha, Y.-K. Lin, M.-Y. Kao, Yu-H. Liao, J. P. Duarte, S. Salahuddin, and C. Hu, “NCFET Design Considering Maximum Interface Electric Field,” in IEEE Electron Device Letters, 2018. (Link)

[17]P. Kushwaha, H. Agarwal, Y.-K. Lin, M.-Y. Kao, J. P. Duarte, H.-L. Chang, W. Wong, X. J. Fan, Y. S. Chauhan, S. Salahuddin, and C. Hu, Modeling of Advanced RF Bulk FinFETs, IEEE Electron Device Letters, vol. 39, no. 6, pp. 791 to 794, doi:10.1109/LED.2018.2825422, 2018.(Link)

[18]H. Agarwal, P. Kushwaha, J. P. Duarte, Y.-K. Lin, A. Sachid, M.-Y. Kao, H.-L. Chang, S. Salahuddin and C. Hu, “Engineering Negative Differential Resistance in NCFETs for Analog Applications”  IEEE Transactions on Electron Devices, 2018. (Link)

[19]H. Agarwal, P. Kushwaha, J. P. Duarte, Y.-K. Lin, A. Sachid, M.-Y. Kao, H.-L. Chang, S. Salahuddin and C. Hu, "Designing 0.5V 5nm HP and 0.23V 5nm LP NC-FinFETs with Improved Ioff Sensitivity in Presence of Parasitic Capacitance," IEEE Trans. Electron Devices, 2018. (Link)

[20]A. K. Dabhi, A. Dasgupta, P. Kushwaha, H. Agarwal, C. Hu, and Y. S. Chauhan, "Modeling of Induced Gate Thermal Noise including Back Bias Effect in FD-SOI MOSFET", IEEE Microwave and Wireless Components Letters, 2018. (Accepted)

[21]Yen-Kai Lin, Pragya Kushwaha, Juan Pablo Duarte, Huan-Lin Chang, Harshit Agarwal, Sourabh Khandelwal, Angada Sachid, Michael Harter, Josef Watts, Yogesh S. Chauhan, Sayeef Salahuddin, and Chenming Hu, "New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs," IEEE Trans. Electron Devices, 2018. [Link]

[22]Yen-Kai Lin, Pragya Kushwaha, Harshit Agarwal, Huan-Lin Chang, Juan Pablo Duarte, Angada Sachid, Sourabh Khandelwal, Sayeef Salahuddin, and Chenming Hu, "Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTBSOI MOSFETs," IEEE Trans. Electron Devices, vol. 64, no. 10, pp. 3986–3990, Oct. 2017. [Link]

[23]Yen-Kai Lin, Juan Pablo Duarte, Pragya Kushwaha, Harshit Agarwal, Huan-Lin Chang, Angada Sachid, Sayeef Salahuddin, and Chenming Hu, "Compact Modeling Source-to-Drain Tunneling in Sub-10nm GAA FinFET with Industry Standard Model," IEEE Trans. Electron Devices, vol. 64, no. 9, pp. 3576–3581, Sep. 2017. [Link]

[24]Y. Sahu, P. Kushwaha, A. Dasgupta, C. Hu, and Y. S. Chauhan, "Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect", in IEEE Transactions on Microwave Theory and Techniques, vol 65, issue 7, pp. 2261-2270, July 2017.

[25]P. Kushwaha, S. Khandelwal, J. P. Duarte, C. Hu, Y. S. Chauhan, "RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model," in IEEE Transactions on Microwave Theory and Techniques , vol.PP, no.99, pp.1-7, 2016. link

[26]P. Kushwaha, B. Krishna K, H. Agarwal , S. Khandelwal, J. P. Duarte, C. Hu, Y. S. Chauhan, “Geometrically Scalable Thermal Resistance Model for FDSOI Transistors”, Volume 56, Pages 171-176, Microelectronics Journal, 2016.

[27]P. Kushwaha, A. Dasgupta, Y. Sahu, S. Khandelwal, C. Hu and Y. S. Chauhan , “Characterization of High Frequency Noise of 8 nm thin FDSOI MOSFET for 1-18 GHz”, in IEEE Journal of Electron Devices Society, 2016.

[28]A. K. Kompala, P. Kushwaha, H. Agarwal, S. Khandelwal, J. P. Duarte, C. Hu and Y. S. Chauhan., “Modeling of Nonlinear Thermal Resistance in FinFETs”, in Japanese Journal of Applied Physics, 2016.

[29]S. Khandelwal, H. Agarwal, P. Kushwaha, J. P. Duarte, A. Medury, Y. S. Chauhan, S. Salahuddin, and C. Hu, "Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport",  IEEE Electron Device Letters, Vol. 37, Issue 2, Feb. 2016

[30]H. Agarwal, P. Kushwaha, C. Gupta, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Analysis and Modeling of Flicker Noise in Lateral Asymmetric Channel MOSFETs", Solid State Electronics, Vol. 115, Part A, Jan. 2016.

[31]P. Kushwaha, N. Paydavosi, S. Khandelwal, C. Yadav, H. Agarwal, J. P.   Duarte,  C. Hu, Y. S. Chauhan,  “Modeling the Impact of Substrate Depletion in FDSOI MOSFETs” in Solid State Electronics, Vol. 104, Issue 2, Feb. 2015.

[32]H. Agarwal, C. Gupta, P. Kushwaha, C. Yadav, J. P. Duarte, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model", IEEE Journal of Electron Devices Society, Vol. 3, Issue 3, March 2015.

[33]C. Yadav, P. Kushwaha, S. Khandelwal, J. P. Duarte, Y. S. Chauhan, and C. Hu, "Modeling of GaN based Normally-off FinFET", IEEE Electron Device Letters, Vol. 35, Issue 6, June 2014.

 

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Conferences

[1]   Y. Machhiwar, P. Kushwaha, H. Agarwal, “Optimization of Source/Drain-epi Region Height in GAA Nanosheet FET for RF Applications”, 2024 IEEE Device Research Conference, June 2024 (accepted).

[2]   M. H. Ansari, R. Dangi, A. Pampori, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023. 

[3]   M. S. Nazir, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "Characterization and Modeling of Drain Lag using a Modified RC Network in the ASM-HEMT Framework", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain, September 2022

[4]   R. Dangi, A. Pampori, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "A width-scalable SPICE compact model for GaN HEMTs including self-heating effect", 80th Device Research Conference (DRC), Ohio, USA, June, 2022.

[5]   Y. S. Chauhan, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, "A Turnkey Large-Signal Model for Amplifier Design in 5G Spectra using AlGaN/GaN HEMTs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Oita, Japan, Mar. 2022. (Invited)

[6]   Pragya Kushwaha, Santanu Sinha, Chiranjit K Karmakar, Manish Sahu, Rakesh K Kaneriya, Punam Pradeep Kumar, Apurba Bhattacharya, "Characterization of GaN HEMT at Cryogenic Temperatures", IEEE MTT-S International Microwave and RF Conference (IMaRC), Accepted, October 2021.

[7]   H. Agarwal, P. Kushwaha, A. Dasgupta, M.-Y. Kao, T. Morshed, G. Workman, K. Shanbhag, X. Li, Y. S. Chauhan, S. Salahuddin and C. Hu,, "BSIM-IMG: Advanced Model for UTBSOI Transistors with Back Gate Inversion", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020. 

[8]   P.Kushwaha et.al., "Modeling the Quantum Gate capacitance of Nano-Sheet Gate-All-Around MOSFET ", IEEE SOI–3D–Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, USA, Oct. 2019.  

[9]   C. K. Dabhi, P. Kushwaha, H. Agarwal, S. S. Chauhan, C. Hu, and Y. S. Chauhan, “Physical Analysis of Non-monotonic DIBL Dependence on Back Gate Bias in Thick Front Gate Oxide FDSOI MOSFETs”, IEEE SOI–3D–Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, USA, Oct. 2019.

[10] P. Kushwaha, J.P. Duarte, Y-K. Lin, H. Agarwal, H-L. Chang, A. Sachid, S. Salahuddin, Y.S. Chauhan, C. Hu, “Unified Compact Model for Gate All Around FETs- Nanosheets, Nanowires, Multi Bridge Channel MOSFETs”, Workshop on Compact Modeling, Anaheim, CA, USA, 2018. (Link) 

[11]P. Kushwaha, H. Agarwal, C. K. Dabhi, Y.-K. Lin, J. P. Duarte, C. Hu, and Y. S. Chauhan, "A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect", IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bengaluru, India, Mar. 2018.

[12]Y.-K. Lin, M.-Y.  Kao, H. Agarwal, Y. -H. Liao, P. Kushwaha, K. Chatterjee, J. P. Duarte, H.-L. Chang, S. Salahuddin, and C. Hu, “Effect of Polycrystallinity and Presence of Dielectric Phases on NC-FinFET Variability“, IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec 2018 

[13]J. P. Duarte, Y.-K. Lin, Y. -H. Liao, A. Sachid, M.-Y.  Kao, H. Agarwal, P. Kushwaha, K. Chatterjee, D. Kwon, H.-L. Chang, S. Salahuddin, and C. Hu, “Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation”, IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sept. 2018 (invited)

[14]M. Bhoir, P. Kushwaha, Y. S. Chauhan and N. R. Mohapatra, "Impact of Substrate on the Frequency Behavior of Trans-conductance in Ultra-thin Body and BOX FDSOI MOS Devices – A Physical Insight", IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2017.

[15]R. Singh, P. Kushwaha, S. Ghosh, B. Parvais, Y. S. C and A. Dixit, "Characterization and Modeling of N-Channel Bulk FinFETs from DC to High Frequencies", IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hsinchu, Taiwan, Oct. 2017.

[16]P. Kushwaha, R. Agarwal, H. Agarwal, C. Gupta, S. Khandelwal, J. P. Duarte, Y. K. Lin, H. L. Chang, C. Hu, and Y. S. Chauhan, "Modeling of Threshold Voltage for Operating Point using Industry standard BSIM-IMG Model",  in IEEE EDSSC 2016.

[17]P. Kushwaha, H. Agarwal, M. Bhoir, N. R. Mohapatra, S. Khandelwal, J. P. Duarte, Y.-K. Lin, H.-L. Chang, C. Hu and Y. S. Chauhan, "Predictive Effective Mobility Model for FDSOI Transistors using Technology Parameters", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016.

[18]H. Agarwal, P. Kushwaha, S. Khandelwal, J. P. Duarte, Y.-K. Lin, H.-L. Chang, C. Hu, H. Wu, P. D. Ye and Y. S. Chauhan, "Modeling of GeOI and Validation with Ge-CMOS Inverter Circuit using BSIM-IMG Industry Standard Model", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016.

[19]Juan Pablo Duarte, S. Khandelwal, Huan-Lin Chang, Yen-Kai Lin, P. Kushwaha, Y. S. Chauhan, and C. Hu, “Modeling Independent Multi-Gate MOSFET,” 2016 Workshop on Compact Modeling (WCM), Washington, D.C., USA, May 2016.

[20]P. Kushwaha, H. Agarwal, S. Khandelwal, J. P. Duarte, A. Medury, C. Hu and Y. S. Chauhan, "BSIM-IMG: Compact Model for RF-SOI MOSFETs",  in IEEE Device Research Conference (DRC), Columbus, USA, June 2015.

[21]P. Kushwaha, S. Khandelwal, J. P. Duarte, C. Hu, and Y. S. Chauhan, "Thermal Resistance Scaling with Number of fins in FinFET", SRC TECHCON, Austin, USA, September 2015.

[22]P. Kushwaha, S. Khandelwal, C. Hu and Y. S. Chauhan, "Recent Updates in Industry Standard BSIM-IMG Model for FDSOI Transistors", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.

[23]C. Gupta, H. Agarwal, Akira Ito, S. Ghosh, P. Kushwaha, C. Hu, and Y. S. Chauhan, "Modeling of Zero-Vth MOSFET with Industry Standard BSIM6 Model”, International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.

[24]J. P. Duarte, S. Khandelwal, A. Medury, C. Hu, P. Kushwaha, H. Agarwal, A. Dasgupta, and Y. S. Chauhan "BSIM-CMG: Standard FinFET Compact Model for Advanced Circuit Design", IEEE European Solid-State Circuit Conference (ESSCIRC), Graz, Austria, Sept. 2015.

[25]P. Kushwaha, C. Yadav, H. Agarwal, J. Srivatsava, S. Khandelwal, J. P. Duarte, S. Khandelwal, Y. S. Chauhan, C. Hu, “BSIM-IMG with Improved Surface Potential Calculation” in IEEE INDICON, 2014. (Best Paper Award)

[26]C. Yadav, P. Kushwaha, H. Agarwal, Y. S. Chauhan, “Threshold Voltage Modeling of GaN Based Normally-Off Tri-gate Transistor” in IEEE INDICON, 2014.

[27]Y. S. Chauhan, P. Kushwaha, S. Khandelwal, C. Yadav, N. Paydavosi, J. P. Duarte and C. Hu, "BSIMIMG: COMPACT MODEL FOR UTBBSOI MOSFETs", Workshop on Compact Modeling, Washington D.C., USA, June 2014. (Invited) 

[28]J. R. Sahoo, H. Agarwal, C. Yadav, P. Kushwaha, S. Khandewal, R. Gillon, Y. S. Chauhan, "High Voltage LDMOSFET Modeling using BSIM6 as Intrinsic-MOS Model", IEEE PrimeAsia, Visakhapatnam, Dec. 2013.

[29]H. Agarwal, S. Venugopalan, M. Chalkiadaki, N. Paydavosi, J. P. Duarte, S. Agnihotri, C. Yadav, P. Kushwaha, Y. S. Chauhan, C. C. Enz, A. Niknejad and C. Hu, "Recent Enhancements in BSIM6 Bulk MOSFET Model", IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, Sept. 2013.

[30]Y. S. Chauhan, S. Venugopalan, N. Paydavosi, P. Kushwaha, S. Jandhyala, J. P. Duarte, S. Agnihotri, C. Yadav, H. Agarwal, A. Niknejad and C. Hu, "BSIM Compact MOSFET Models for SPICE Simulation", IEEE International Conference Mixed Design of Integrated Circuits and Systems (MIXDES), Gdynia, Poland, June 2013.