Welcome to Shree Prakash Tiwari's webpage
Shree Prakash Tiwari, Ph.D.
Senior Member, IEEE
Associate Professor (Electrical Engineering)
Indian Institute of Technology Jodhpur

 
Contact Details
E-mail: sptiwari[at]iitj.ac.in, Phone (Office): +91 291 280 1356,
Office: Room No. 210, Department of Electrical Engineering,
IIT Jodhpur, Karwar, Jodhpur, Rajasthan, India, 342037.  
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I am currently working as an Associate Professor of Electrical Engineering at IIT Jodhpur, Rajasthan, India. My main research areas are organic/flexible electronics, micro/nano electronics, and semiconductor devices.

Before joining IIT Jodhpur
, I had worked in Prof. Bernard Kippelen's Research Group at School of Electrical and Computer Engineering at Georgia Institute of Technology, Atlanta, USA, as a Postdoctoral Research Fellow (from July 2008 to May 2011).
Prior to that, I had completed my Ph.D. in microelectronics (July 2003 to May 2008) from Electrical Engineering Department, IIT Bombay, under supervision of  Prof. V Ramgopal Rao. Please go through the respective links for more details. Research details can also be seen on my Google Scholar or Scopus profile, and on the page of FLAME Research Group.


Latest News
  • Journal Paper Accepted on OFETs and Circuits on Flexible Polyimide Substrates by Vivek Raghuwanshi et al. in IEEE Transactions on Electron Devices (Impact Factor ~2.6)September 2019.

  • Journal Paper Accepted on OFETs on Paper Substrates by Vivek Raghuwanshi et al. in ACS Applied Materials and Interfaces (Impact Factor ~8.1),  January 2019.

  • Journal Paper Accepted on TIPS-pentacene/CuPc bilayer Photo-OFETs by Ajay Mahato et al. in Synthetic Metals (Impact Factor ~2.5),  January 2019.
  • Journal Paper Accepted on Physical Insight into Carbon Doping Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs, by Vipin Joshi, Shree Prakash Tiwari, and Mayank Shrivastava in IEEE Transactions on Electron Devices (Impact Factor ~2.6), October 2018.

  • Journal Paper Accepted on Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultra High Breakdown AlGaN/GaN HEMTs by Vipin Joshi, Shree Prakash Tiwari, and Mayank Shrivastava, in IEEE Transactions on Electron Devices (Impact Factor ~2.6), October 2018.

Acknowledgement: Institutes/Centres





         

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