Welcome to Shree Prakash Tiwari's webpage
Shree Prakash Tiwari, Ph.D.
Senior Member, IEEE
Assistant Professor (Electrical Engineering)
Indian Institute of Technology Jodhpur
 
Contact Details
E-mail: sptiwari[at]iitj.ac.in, Phone (Office): +91 291 280 1356,
Office: Room No. 210, Department of Electrical Engineering,
IIT Jodhpur, Karwar, Jodhpur, Rajasthan, India, 342037.  
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I am currently working as an Assistant Professor of Electrical Engineering at IIT Jodhpur, Rajasthan, India. My main research areas are organic/flexible electronics, micro/nano electronics, and semiconductor devices.

Before joining IIT Jodhpur, I had worked in Prof. Bernard Kippelen's Research Group at School of Electrical and Computer Engineering at Georgia Institute of Technology, Atlanta, USA, as a Postdoctoral Research Fellow (from July 2008 to May 2011).
Prior to that, I had completed my Ph.D. in microelectronics (July 2003 to May 2008) from Electrical Engineering Department, IIT Bombay, under supervision of  Prof. V Ramgopal Rao. Please go through the respective links for more details. Research details can also be seen on my Google Scholar or Scopus profile.
Latest News

  • Journal Paper Accepted on Physical Insight into Carbon Doping Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs, by Vipin Joshi, Shree Prakash Tiwari, and Mayank Shrivastava in IEEE Transactions on Electron Devices (Impact Factor ~2.6), October 2018.

  • Journal Paper Accepted on Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultra High Breakdown AlGaN/GaN HEMTs by Vipin Joshi, Shree Prakash Tiwari, and Mayank Shrivastava, in IEEE Transactions on Electron Devices (Impact Factor ~2.6), October 2018.

  • Journal Paper Accepted on Investigation of Resistive Switching in PVP and Ultra-Thin HfOx Based Bilayer Hybrid RRAM in Solid State Ionics (Impact Factor ~2.4),  August 2018.

  • Vipin Joshi submitted his Ph.D. Thesis on "TCAD computations based GaN buffer designing in AlGaN/GaN HEMTs", July 2018

  • Journal Paper Accepted on Robust non-volatile bipolar resistive switching switching in sol-gel derived BiFeO3 thin films in Superlattices and Microstructures (Impact Factor ~2.0),  May 2018.

  • Journal Paper Accepted on Semiconductor:Polymer Blend Ratio Dependent Performance and Stability in Low Voltage Flexible Organic Field-Effect Transistors in Synthetic Metals (Impact Factor ~2.4),  January 2018.

  • Two papers of the group were presented at 12th IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2017), October 2 - 4, 2017, Singapore.
Acknowledgement: Institutes/Centres





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