Mahesh Kumar

Assistant Professor
Electrical Engineering

Lab: Micro and Nanoelectronics Lab

Address:
Department of Electrical Engineering
Indian Institute of Technology Jodhpur
NH-62, Nagaur Road, Karwar
Jodhpur 342037
India

Room: 207
Email: mkumar@iitj.ac.in
Telephone: +91 291 280 1357

Chairman,Indian National Young Academy of Science (INYAS)

Member, Global Young Academy (GYA)

National Conference on Semiconductor Materials and Devices 4-6 March 2016

Biography

Dr. Kumar has received M.Tech degree in Solid State Materials from IIT Delhi and Ph.D degree in Engineering from IISc Bangalore. He worked at Central Research Laboratory of Bharat Electronics Ltd. (CRL-BEL) Bangalore as Scientist from 2005 to 2013. During his stint at CRL-BEL, he has worked on industry-academia collaboration that involved CRL-BEL and Materials Research Centre, IISc Bangalore. He was involved in the development of GaN based blue LEDs, Quantum-well infrared photodetectors, Solar cells and III-V quantum dots based detectors. He also worked at University of Paderborn, Germany as visiting scientist under Bilateral Exchange Programme of INSA. He has received INSA Medal for Young Scientists-2014,the MRSI Medal-2016 by Materials Research Society of India, Young Achiever Award-2016 by Department of Atomic Energy and ISSS Young Scientist Award 2017 by the Institute for Smart Structures and Systems. He has been awarded among top-10 outstanding reviewers for CrystEngComm (RSC) in 2016. He is founding Member and Chair of Indian National Young Academy of Sciences (2015-2019), Member of Global Young Academy (2017-2022) and IEEE Senior Member from 2016. He has been selected for the prestigious Bhaskara Advanced Solar Energy Fellowship supported by the Department of Science and Technology, Govt. of India, and the Indo-U.S. Science and Technology Forum. He has published more than 65 research articles.

Current Research area

• Oxide metal semiconductors by sputtering for sensor applications
• Thin films and nanostructures of polar and non-polar Group III-Nitrides
• 2D materials: MoS2, AlGaN/GaN HEMTs
• Epitaxial growth of Group III-V semiconductos
• Bandgap engineering and surface studies of semiconductors
• Micro and Nano device fabrications

Teaching

• Optoelectronics
• Electromagnetic Theory
• Microelectronics-II
• Sensors in Instrumentation
• Physics of Semiconductor Devices

Group Members

• Dr. Saravanan Rajamani, National-Postdoc Fellowship (N-PDF)
• Dr. Nandlal Sharma, Research Associate
• Vijendra Bhati, Ph.D
• Adarsh Nigam, Ph.D
• Rahul Kumar, Ph.D
• Neeraj Goyal, Ph.D
• Amit Shringi, Ph.D

Alumni:

Dr. Surendra Singh Barala,Scientist @ Defence Lab Jodhpur,DRDO

Dr. Sapana Ranwa, Ph.D (2011-2017) Currently Post-doc at IIT Delhi

Yogeshwaran Krishnan, SRF (Jan -March 2018)

Mohit Kumar, JRF/SRF (August 2014 to June 2017)

Shivani Agarwal, SRF (Nov 2015- July 2016) Currently Ph.D student at IIT Bombay

Journal Publications

2018

79. Highly selective and reversible NO2 gas sensor using vertically aligned MoS2 flake networks
Rahul Kumar, Pawan Kulriya, Monu Mishra, Fouran Singh, Govind Gupta and Mahesh Kumar Nanotechnology (In press).
78. Wafer-Scale Synthesis of a Uniform Film of Few-Layer MoS2 on GaN for 2D Heterojunction Ultraviolet Photodetector
Neeraj Goel, Rahul Kumar, Basanta Roul, Mahesh Kumar and S B Krupanidhi Journal of Physics D: Applied Physics (In press).
77. High-performance photodetector based on hybrid of MoS2 and reduced graphene oxide
Rahul Kumar, Neeraj Goel, Ramesh Raliya, Pratim Biswas, Mahesh Kumar Nanotechnology (In press).
76. Improved Sensitivity with Low Limit of Detection of a Hydrogen Gas Sensor Based on rGO-Loaded Ni-Doped ZnO Nanostructures
Vijendra Singh Bhati, Sapana Ranwa, Saravanan Rajamani, Kusum Kumari, Ramesh Raliya, Pratim Biswas, Mahesh Kumar ACS applied materials & interfaces 10, 11116 (2018).
75. Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction
Neeraj Goel, Rahul Kumar, Monu Mishra, Govind Gupta, Mahesh Kumar Journal of Applied Physics 123, 225301 (2018).
74. Enhanced Carrier Density in a MoS2/Si Heterojunction-Based Photodetector by Inverse Auger Process
Neeraj Goel, Rahul Kumar, Mirabbos Hojamberdiev, Mahesh Kumar IEEE Transactions on Electron Devices (In press).
73. Deep UV narrow-band photodetector based on ion beam synthesized indium oxide quantum dots in Al2O3 matrix
Saravanan Rajamani, Kanika Arora, Anton Konakov, Alexey Belov, Dmitry Korolev, Alyona Nikolskaya, Alexey Mikhaylov, Sergey Surodin, Ruslan Kryukov, Dmitry Nikolitchev, Artem Sushkov, Dmitry Pavlov, David Tetelbaum, Mukesh Kumar, Mahesh Kumar Nanotechnology 29, 305603 (2018).
72. Photoactivated Mixed In-Plane and Edge-Enriched p-Type MoS2 Flake-Based NO2 Sensor Working at Room Temperature
Kanika Arora, Neeraj Goel, Mahesh Kumar, Mukesh Kumar ACS Photonics (In press).
71. Photoactivated Mixed In-Plane and Edge-Enriched p-Type MoS2 Flake-Based NO2 Sensor Working at Room Temperature
Abhay V Agrawal, Rahul Kumar, Swaminathan Venkatesan, Alex Zakhidov, Guang Yang, Jiming Bao, Mahesh Kumar, Mukesh Kumar ACS sensors 3, 998 (2018).
70. Growth of MoS2-MoO3 Hybrid Micro-flowers via Controlled Vapor Transport Process for Efficient Gas Sensing at Room Temperature
Rahul Kumar, Neeraj Goel, Monu Mishra, Govind Gupta, Mattia Fanetti, Matjaz Valant and Mahesh Kumar Advanced Materials Interfaces (In press).
69. High performance NO2 sensor using MoS2 nanowires network
Rahul Kumar, Neeraj Goel and Mahesh Kumar Applied Physics Letters 112, 053502 (2018).
68. Efficient hydrogen sensor based on Ni-doped ZnO nanostructures by RF sputtering
Vijendra Singh Bhati, Sapana Ranwa, Mattia Fanetti, Matjaz Valant and Mahesh Kumar Sensors & Acuators B: Chemical 255, 588(2018).


2017

67. UV-Activated MoS2 Based Fast and Reversible NO2 Sensor at Room Temperature
Rahul Kumar, Neeraj Goel and Mahesh Kumar ACS Sensors 2, 1744 (2017).
66. Engaging the Flux-Grown La1-xSrxFe1-yTiyO3 Crystals in Visible-Light-Driven Photocatalytic Hydrogen Generation
Mirabbos Hojamberdiev, Kenta Kawashima, Mahesh Kumar, Akira Yamakata, Kunio Yubuta, Aleksander Gurlo, Masashi Hasegawa, Kazunari Domen and Katsuya Teshima International Journal of Hydrogen Energy 42, 27024(2017).
65. Fast detection and low power hydrogen sensor using edge-oriented vertically aligned 3-D network of MoS2 flakes at room temperature
A. V. Agrawal,R. Kumar,S. Venkatesan,A. Zakhidov,Z. Zhu,J. Bao,Mahesh Kumar,and Mukesh Kumar Applied Physics Letters 111, 093102(2017).
64. High energy photon induced Fermi-level shift of Ba0.5Sr0.5TiO3 thin films
Surendra Singh Barala, Vijendra Singh Bhati and Mahesh Kumar Thin Solid Films 639, 107(2017).
63. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
Adarsh Nigam, Thirumaleshwara N Bhat, Saravanan Rajamani, Surani Bin Dolmanan, Sudhiranjan Tripathy and Mahesh Kumar AIP Advances 7, 085015 (2017).
62. Formation of Hexagonal 9R Silicon Polytype by Ion Implantation
D. S. Korolev, A. A. Nikolskaya, N. O. Krivulin, A. I. Belov, A. N. Mikhaylov,D. A. Pavlov, D. I. Tetelbaum, N. A. Sobolev, and Mahesh Kumar Technical Physics Letters 43, 767 (2017).
61. Effect of Schottky barrier height on hydrogen gas sensitivity of metal/TiO2 nanoplates
Mohit Kumar, Vijendra Singh Bhati and Mahesh Kumar Int. J. Hydrogen Energy 42, 22082(2017).
60. Efficient room-temperature hydrogen sensor based on UV-activated ZnO nano-network
Mohit Kumar, Rahul Kumar, Saravanan Rajamani, Sapana Ranwa, Mattia Fanetti, Matjaz Valant and Mahesh Kumar Nanotechnology 28, 365502 (2017).
59. Pd/ZnO nanorods based sensor for highly selective detection of extremely low concentration hydrogen
Mohit Kumar, Vijendra Singh Bhati, Sapana Ranwa, Jitendra Singh and Mahesh Kumar Nature:Scientific Reports 7, 236 (2017).
58. Composition and luminescence of Si and SiO2 layers co-implanted with Ga and N ions
D.S. Korolev, A.N. Mikhaylov, A.I. Belov, A.A. Konakov, V.K. Vasiliev, D.E. Nikolitchev, S.I. Surodin, D.I. Tetelbaum and Mahesh Kumar Int. J. Nanotechnology 14, 637 (2017).


2016

57. Modulation of Pb chemical state of epitaxial Lead Zirconate Titanate thin films under high energy irradiation
Surendra Singh Barala, Basanta Roul, Nirupam Banerjee and Mahesh Kumar Journal of Applied Physics 120, 115305 (2016).
56. Improvement in the sensing response of nano-crystalline ZnO based hydrogen sensor: Effect of swift heavy ion irradiation
Sapana Ranwa, Mohit Kumar, Pawan K. Kulriya, Mattia Fanetti, Matjaz Valant, and Mahesh Kumar IEEE Sensors Journal 62, 7586 (2016).
55. Effect of annealing on carrier transport properties of GaN-incorporated Silicon
Saravanan Rajamani, Dmitry Korolev,Alexey Belov, Sergey Surodin, Dmitry Nikolitchev, Evgenia Okulich, Alexey Mikhaylov, David Tetelbaum, Mahesh Kumar RSC Advances 6, 74691 (2016).
54. High Tolerance of BST Thin Film based Varactor under Neutron Irradiation
Surendra Singh Barala,Jitendra Kumar, Mohit Kumar and Mahesh Kumar IEEE Transactions on Electron Devices 63, 3677 (2016).
53. Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorods based hydrogen sensor
Sapana Ranwa,Surendra Singh Barala, Mattia Fenetti and Mahesh Kumar Nanotechnology 27, 345502(2016).
52. Gamma ray Irradiation Stability of Epitaxial Pb(Zr,Ti)O3/SrRuO3 Tunable Varactor Devices
Surendra Singh Barala, Nirupam Banerjee and Mahesh Kumar Journal of Electronic Materials 45, 4122 (2016).
51. Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: the k.p-calculations
A.A. Konakov,D.O. Filatov, D.S. Korolev,A.I. Belov, A.N. Mikhaylov, D.I.Tetelbaum, and Mahesh Kumar AIP Advances 6, 015007 (2016).
50. On the study of phase and dimensionally controlled titania nanostructures synthesis at sub-zero temperatures
Kiran P. Shejale, Devika Laishram, Mahesh S. Roy, Mahesh Kumar, Rakesh K. Sharma, Materials & Design 92,535 (2016).
49. InN Quantum Dot Based Infra-Red Photodetectors
Arjun Shetty, Mahesh Kumar, Basanta Roul, K. J. Vinoy, and S. B. Krupanidhi, Journal of Nanoscience and Nanotechnology 16, 709 (2016).


2015

48. Binary group III-nitride based heterostructures: Band offsets and transport properties
Basanta Roul, Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat,and S. B. Krupanidhi , Journal of Physics D: Applied Physics as a Topical Review 48, 423001 (2015).
47. Radiation Induced Response of Ba0.5Sr0.5TiO3 based Tunable Capacitors under Gamma Irradiation
Surendra Singh Barala, Jitendra Singh, Sapana Ranwa, and Mahesh Kumar, IEEE Transactions on Nuclear Science 62, 1873 (2015).
46. Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications
Sapana Ranwa, Mohit Kumar, Jitendra Singh, Mattia Fanetti, and Mahesh Kumar, Journal of Applied Physics 118, 034509 (2015).
45. Observation of room temperature ferromagnetism in InN nanostructures
Basanta Roul, Mahesh Kumar, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, S. B. Krupanidhi, Nitesh Kumar and A. Sundaresan, Journal of Nanoscience and Nanotechnology 15, 4426 (2015).
44. Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS device
Jitendra Singh, Sapana Ranwa, Jamil Akhtar, and Mahesh Kumar, AIP Advances 5, 067140 (2015).


2014

43. Defect-free ZnO nanorods for low temperature hydrogen sensor
Sapana Ranwa, Pawan K. Kulriya, Vikas Kumar Sahu, L. M. Kukreja, and Mahesh Kumar, Applied Physics Letters 105, 213103 (2014).
42. Temperature dependent electrical transport studies of self-aligned ZnO nanorods/Si heterostructures deposited by sputtering
Sapana Ranwa, P. K. Kulriya, Vivek Dixit, and Mahesh Kumar, Journal of Applied Physics 115, 233706 (2014).
41. Study of InN nanorods growth mechanism using ultrathin Au layer by plasma-assisted MBE on Si(111)
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, and S. B. Krupanidhi , Applied Nanoscience, 4, 121 (2014).


2013

40. Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN on p-Si(100)by molecular beam epitaxy
Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Basanta Roul, Mahesh Kumar and S. B. Krupanidhi, Journal of Materials Science: Materials in Electronics, 24, 3371(2013).
39. Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions
Mahesh Kumar, Basanta Roul, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, A. T. Kalghatgi, and S. B. Krupanidhi , Current Applied Physics, 13, 26 (2013).
38. Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction
Thirumaleshwara N Bhat, Basanta Roul, Mohana K Rajpalke, Mahesh Kumar, and S B Krupanidhi , Journal of Nanoscience and Nanotechnology, 13, 498 (2013).


2012

37. Structural characterization and ultraviolet photoresponse of MBE- grown GaN nanodots
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, and S. B. Krupanidhi , Applied Physics Express 5, 085202 (2012).
36. Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE
Mahesh Kumar, Thirumaleshwara N Bhat, Mohana K Rajpalke, Basanta Roul, A T Kalghatgi, and S B Krupanidhi, Journal of Alloys and Compounds 513, 6 (2012).
35. Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
Mahesh Kumar, Thirumaleshwara N. Bhat, Basanta Roul, Mohana K. Rajpalke, A. T. Kalghatgi, and S. B. Krupanidhi, Materials Research Bulletin 47, 1306 (2012).
34. Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy
Mahesh Kumar, Mohana K. Rajpalke, Basanta Roul, Thirumaleshwara N. Bhat, A. T. Kalghatgi, and S. B. Krupanidhi , Physica status solidi (b) 249, 58 (2012).
33. Band-structure lineup at In0.2Ga0.8N/Si heterostructures by x-ray photoelectron spectroscopy
Mahesh Kumar, Basanta Roul, Thirumaleshwara N Bhat, Mohana K Rajpalke, A T Kalghatgi, and S B Krupanidhi, Japanese Journal of Applied Physics 51, 020203 (2012).
32. Valence band offset at GaN/?-Si3N4 and ?-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy
Mahesh Kumar, Basanta Roul, Thirumaleshwara N Bhat, Mohana K Rajpalke, A T Kalghatgi, and S B Krupanidhi , Thin Solid Films 520, 4219 (2012).
31. Carrier transport studies of III-nitride/Si3N4/Si isotype heterojunctions
Mahesh Kumar, Basanta Roul, Thirumaleshwara N Bhat, Mohana K Rajpalke, A T Kalghatgi, and S B Krupanidhi, Physica Status Solid (a) 209, 994 (2012).
30. Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes
Basanta Roul, Thirumaleshwara N Bhat, Mahesh Kumar, Mohana K Rajpalke, A T Kalghatgi, and S B Krupanidhi , Physica Status Solid (a), 209, 1575 (2012).
29. Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE
Basanta Roul, Mohana K Rajpalke, Thirumaleshwara N Bhat, Mahesh Kumar, A T Kalghatgi, and S B Krupanidhi, Journal of crystal growth, 354, 208 (2012).
28. Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions
Basanta Roul, Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, A. T. Kalghatgi, and S. B. Krupanidhi , Solid State Communications, 152, 1771 (2012).
27. Current transport in nonpolar a-plane InN/GaN heterostructure Schottky junction
Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Basanta Roul, Mahesh Kumar, and S. B. Krupanidhi, Journal of applied Physics, 112, 023706 (2012).


2011

26. Temperature dependence of carrier transport in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate
Mahesh Kumar, Basanta Roul, Arjun Shetty, Mohana K Rajpalke, Thirumaleshwara N Bhat, A T Kalghatgi, and S B Krupanidhi, Applied Physics Letters 99, 153114 (2011).
25. The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (111) by RF-MBE
Mahesh Kumar, Mohana K. Rajpalke, Basanta Roul, Thirumaleshwara N. Bhat, Neeraj Sinha, A. T. Kalghatgi, and S. B. Krupanidhi, Applied Surface Science 257, 2107 (2011).
24. Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Neeraj Sinha, A. T. Kalghatgi, and S. B. Krupanidhi, Journal of Nanoparticle Research 13, 1281 (2011).
23. Temperature dependent photoluminescence of GaN grown on beta-Si3N4/Si(111) by plasma-assisted MBE
Mahesh Kumar, Mohana K. Rajpalke, Basanta Roul,, Thirumaleshwara N. Bhat, P. Misra, L. M. Kukreja, Neeraj Sinha, A. T. Kalghatgi, and S. B. Krupanidhi , Journal of Luminescence 131, 614 (2011).
22. Negative differential capacitance in n-GaN/p-Si heterojunction
Mahesh Kumar, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Basanta Roul, Neeraj Sinha, A. T. Kalghatgi and S. B. Krupanidhi , Solid State Communications 151, 356 (2011).
21. Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE
Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Basanta Roul, Neeraj Sinha, A. T. Kalghatgi, and S. B. Krupanidhi, Materials Letters 65, 1396 (2011).
20. Study of band offsets in InN/Ge heterojunctions
Mahesh Kumar, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Basanta Roul, Neeraj Sinha, A. T. Kalghatgi, and S. B. Krupanidhi, Surface Science 605, L33 (2011).
19. Reduction of oxygen impurity at GaN/beta-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux
Mahesh Kumar, Mohana K. Rajpalke, Basanta Roul, Thirumaleshwara N. Bhat, S. Dash, A. K. Tyagi, A. T. Kalghatgi, and S. B. Krupanidhi, Journal of crystal growth 327,284 (2011).
18. Barrier inhomogeneity and electrical properties of InN nanodots/Si heterojunction diodes
Mahesh Kumar, Basanta Roul, Thirumaleshwara N Bhat, Mohana K Rajpalke, A. T. Kalghatgi, and S. B. Krupanidhi, Journal of Nanomaterials 2011, 189731 (2011).
17. Size dependent band gap of MBE grown InN quantum dots measured by scanning tunneling spectroscopy
Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Basanta Roul, A. T. Kalghatgi, and S. B. Krupanidhi, Journal of Applied Physics 110, 114317 (2011).
16. Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
Mahesh Kumar, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Basanta Roul, A. T. Kalghatgi, and S. B. Krupanidhi, Nanoscale Research Letters 6, 609 (2011).
15. Growth temperature induced effects in nonpolar a-plane GaN on r-plane sapphire substrate by RF-MBE
Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Basanta Roul, Mahesh Kumar, P. Misra, L. M. Kukreja, Neeraj Sinha and S. B. Krupanidhi, Journal of crystal growth 314, 5 (2011).
14. Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
Basanta Roul, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Mahesh Kumar, Neeraj Sinha, A. T. Kalghatgi and S. B. Krupanidhi , Journal of applied Physics 109, 044502 (2011).
13. Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
Mohana K. Rajpalke , Basanta Roul, , Mahesh Kumar, Thirumaleshwara N. Bhat, Neeraj Sinha and S. B. Krupanidhi, Scripta Materialia 65, 33 (2011).
12. Band alignment of at InN/p-Si(100) heterojunction determined by x-ray photoelectron spectroscopy
Thirumaleshwara N. Bhat, Mahesh Kumar, Mohana K. Rajpalke, Basanta Roul, Neeraj Sinha, and S. B. Krupanidhi, Journal of Applied Physics 109, 123707 (2011).
11. Evidence for ambient oxidation of Indium nitride quantum dots
Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Basanta Roul, Mahesh Kumar, Neeraj Sinha, and S. B. Krupanidhi , physica status solidi (b) 248, 2853 (2011).
10. Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions
Basanta Roul, Thirumaleshwara N. Bhat, Mahesh Kumar, Mohana K. Rajpalke, Neeraj Sinha, A. T. Kalghatgi, and S. B. Krupanidhi , Solid State Communications 151, 1420 (2011).
9. Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
Basanta Roul, Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Neeraj Sinha, A. T. Kalghatgi and S. B. Krupanidhi, Journal of Applied Physics 110, 064502 (2011).
8. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
Basanta Roul, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Mahesh Kumar, A. T. Kalghatgi, S. B. Krupanidhi, Nitesh Kumar and A. Sundaresan, Applied Physics Letters 99, 162512 (2011).
7. Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam Epitaxy
Thirumaleshwara N. Bhat, Mohana K. Rajpalke Mahesh Kumar, Basanta Roul, S. B. Krupanidhi,Journal of Applied Physics 110, 093718 (2011).


2010

6. Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, P. Misra, L. M. Kukreja, Neeraj Sinha, A. T. Kalghatgi, and S. B. Krupanidhi,Materials Research Bulletin 45, 1581 (2010).
5. Droplet epitaxy of InN quantum dots on Si (111) by RF plasma- assisted Molecular Beam Epitaxy
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Neeraj Sinha, A. T. Kalghatgi and S. B. Krupanidhi,Advanced Science Letters 3, 379 (2010).
4. Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy
Mahesh Kumar, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Basanta Roul, P. Misra, L. M. Kukreja, Neeraj Sinha, A. T. Kalghatgi, and S. B. Krupanidhi,Bulletin of Material Science 33, 221 (2010).
3. Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures
Thirumaleshwara N. Bhat, Basanta Roul, Mohana K. Rajpalke, Mahesh Kumar, S. B. Krupanidhi and Neeraj Sinha,Applied Physics Letters 97, 202107 (2010).
2. Indium nitride nanomatric-objects grown on c-sapphire by plasma-assisted molecular beam epitaxy
Basanta Roul, Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Neeraj Sinha, A. T. Kalghatgi and S. B. Krupanidhi ,Nanoscience and nanotechnology letters 2, 257 (2010).


2009-07

1. Growth and characterization of high resistivity c-axis oriented ZnO films on different substrates by RF magnetron sputtering for MEMS applications
Ravindra Singh, Mahesh Kumar and Sudhir Chandra,Journal of Materials Science 42, 4675 (2007).

Proceedings

13. Highly sensitive H2 gas sensor of Co doped ZnO nanostructures
Vijendra Singh Bhati, Sapana Ranwa and Mahesh Kumar AIP Conference Proceedings 1942, 050059 (2018).
12. Enhanced sensing response with complete recovery of MoS2 sensor under photoexcitation
Neeraj Goel, Rahul Kumar and Mahesh Kumar AIP Conference Proceedings 1942, 050060 (2018).
11. NO2 sensing at room temperature using vertically aligned MoS2 flakes network
Rahul Kumar, Neeraj Goel and Mahesh Kumar AIP Conference Proceedings 1942, 060006 (2018).
10. Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy
Mohana K. Rajpalke, Basanta Roul, Thirumaleshwara N. Bhat, Mahesh Kumar, Neeraj Sinha, V. M. Jali and, S. B. Krupanidhi, , Physica Status Solidi (c) 11, 932 (2014).
9. Investigation of chemically synthesized graphene as counter electrode for dye sensitized solar cells
Shejale Kiran Prakash, Rakesh K. Sharma, Mahesh S. Roy and Mahesh Kumar,AIP Conf. Proceedings 1620, 223 (2014).
8. Carbon Coated Stainless Steel as Counter Electrode for Dye Sensitized Solar Cells
Shejale Kiran Prakash, Rakesh K. Sharma, Mahesh S. Roy and Mahesh Kumar,AIP Conf. Proceedings 1620, 218 (2014).
7. Substrates impact on growth of InN nanostructures by droplet epitaxy
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, and S. B. Krupanidhi , Physica Status Solid (c) 10, 409 (2013).
6. Molecular beam epitaxial growth of (1 1 -2 2) GaN on m-plane sapphire
Mohana K Rajpalke, Mahesh Kumar, Basanta Roul, Thirumaleshwara N Bhat, and S B Krupanidhi, Physica Status Solid (c) 10, 381 (2013).
5. Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures
Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Basanta Roul, Mahesh Kumar and S. B. Krupanidhi ,MRS Proceedings, 1396, mrsf11-1396-o07-11 (2012).
4. Comparative studies on photovoltaic performance of InN nanostructures/p-Si (100) heterojunction devices grown by molecular beam epitaxy
Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Mahesh Kumar, Basanta Roul, and S. B. Krupanidhi,MRS Proceedings, 1391, mrsf11-1391-j07-21 (2012).
3. Wurtzite InN nanodots on Si(100) by molecular beam epitaxy
Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Mahesh Kumar, Basanta Roul, and S. B. Krupanidhi ,SPIE proceeding, 8549, 85492G (2012).
2. Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy
Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Mahesh Kumar, Basanta Roul and S. B. Krupanidhi,SPIE proceedings, 8549, 85492W (2012).
1. Indium Nitride (InN) Nanostructures Grown by Plasma?Assisted Molecular Beam Epitaxy (PAMBE)"
Neeraj Sinha, V. M. Jali, Thirumaleshwara N. Bhat, Basanta Roul, Mahesh Kumar Mohana K. Rajpalke, S. B. Krupanidhi,AIP Conf. Proc. 1393, 77 (2011).